Injected charge extraction by linearly increasing voltage for bimolecular recombination studies in organic solar cells

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Molecular weight dependent bimolecular recombination in organic solar cells.

Charge carrier recombination is studied in operational organic solar cells made from the polymer:fullerene system PCDTBT:PC71BM (poly[N-9''-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)]: [6,6]-phenyl-C70-butyric acid methyl ester). A newly developed technique High Intensity Resistance dependent PhotoVoltage is presented for reliably quantifying the bimolecul...

متن کامل

Charge Carrier Recombination in Bulk Heterojunction Organic Solar Cells

Photovoltaic phenomenon was first observed by E. Becquerel (Becquerel) in 1839. He observed the electric current-lit silver electrode, immersed in the electrolyte. In 1894, taking advantage of the observed photoconductivity phenomenon in amorphous selenium the semiconductor solar cell was developed. The very first silicon p-n junction solar cell was made in 1954, energy conversion efficiency of...

متن کامل

Charge Recombination in Organic Small-molecule Solar Cells

To enhance the power conversion efficiency in organic solar cells, charge recombination loss needs to be minimized. First, we perform transient absorption spectroscopy to study the charge recombination dynamics of thin film bulk heterojunction of the archetype organic solar cell molecules, copper phthalocyanine (CuPC) and 3,4,9,10-perylenetetracarboxylic bis-benzimidazole (PTCBI). We report the...

متن کامل

Restricted charge recombination process in PbS quantum dot sensitized solar cells by different coating cycles of ZnS films

The relatively low power conversion efficiency (PCE) of quantum dot sensitized solar cells (QDSSCs) is attributed to charge recombination at the interfaces. Charge recombination process could be suppressed by coating the QD layer with a wide band gap semiconductor such as ZnS, which acts as a blocking layer between the QDs and hole transport material (HTM). In present study, to improve PCE of P...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2012

ISSN: 0003-6951,1077-3118

DOI: 10.1063/1.4747330